ZTX600 Not Recommended for
New Design Please Use ZTX601
ZTX600
ZTX601
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT CONDITIONS.
MIN. TYP.
Static Forward
Current Transfer
Ratio
MAX.
1K
2K
1K
hFE
MAX. MIN. TYP.
1K
100K 2K
1K
100K
IC=50mA, VCE=10V*
IC=0.5A, VCE=10V*
IC=1A, VCE=10V*
2K
5K
3K
20K
IC=50mA, VCE=10V*
IC=0.5A, VCE=10V*
IC=1A, VCE=10V*
100K
IC=50mA, VCE=10V*
IC=0.5A, VCE=10V*
IC=1A, VCE=10V*
Group A
1K
2K
1K
2K
5K
3K
20K
Group B
5K
10K
5K
10K
20K
10K
5K
100K 10K
5K
10K
20K
10K
150
250
150
250
1K
2K
1K
Transition
Frequency
fT
Input Capacitance
Cibo
60
90
Cobo
10
15
pF
VEB=0.5V, f=1MHz
15
10
IC=100mA,
VCE=10V f=20MHz
90
60
Output
Capacitance
MHz
pF
VCE=10V, f=1MHz
ton
0.75
0.75
µs
toff
Switching Times
2.2
2.2
IC=0.5A, VCE=10V
IB1=IB2=0.5mA
µs
Maximum Power Dissipation (W)
R5 = 50KΩ
1.0
ISSUE 2 JUNE 94
FEATURES
* 160 Volt VCEO
* 1 Amp continuous current
* Gain of 5K at IC=1 Amp
* Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT
Collector-Base Voltage
VCBO
160
180
V
Collector-Emitter Voltage
VCEO
140
160
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4
A
IC
1
A
1
5.7
W
mW/ °C
-55 to +200
°C
Continuous Collector Current
Power Dissipation
at Tamb=25°C
derate above 25°C
Ptot
Tj:Tstg
Operating and Storage Temperature Range
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
ZTX600
ZTX601
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
R5 = 5KΩ
PARAMETER
SYMBOL
ZTX600
MIN. TYP.
0.8 R5 = 1MΩ
R5 = ∞
ZTX601
MAX. MIN. TYP.
UNIT CONDITIONS.
MAX.
Collector-Base
V(BR)CBO
Breakdown Voltage
0.2
0
1
10
100
200
V
IC=100µA
140
160
V
IC=10mA*
Emitter-Base
V(BR)EBO
Breakdown Voltage
DC Conditions
0.4
180
Collector-Emitter
V(BR)CEO
Breakdown Voltage
0.6
160
10
10
V
IE=100µA
10
µA
µA
µA
µA
VCB=140V
VCB=160V
VCB=140V,T==100°C
VCB=160V,T==100°C
0.1
µA
VEB=8V
10
µA
µA
VCES=140V
VCES=160V
Collector Cut-Off
Current
0.01
ICBO
10
VCE - Collector-Emitter Voltage (Volts)
Emitter Cut-Off
Current
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using the
following equation
T amb (max ) =
Power (max ) − Power (act)
0.0057
+25° C
Tamb(max)= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE
and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
3-207
0.01
IEBO
0.1
Colllector-Emitter
Cut-Off Current
ICES
10
Collector-Emitter
Saturation Voltage
VCE(sat)
0.75
0.85
1.1
1.2
0.75
0.85
1.1
1.2
V
V
IC=0.5A, IB=5mA*
IC=1A, IB=10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.7
1.9
1.7
1.9
V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.5
1.7
1.5
1.7
V
IC=1A, VCE=5V*
3-206