Preliminary Data Sheet
NP180N055TUK
R07DS0593EJ0100
Rev.1.00
Dec 12, 2011
MOS FIELD EFFECT TRANSISTOR
Description
The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 1.40 m MAX. (VGS = 10 V, ID = 90 A)
Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP180N055TUK-E1-AY *1
Lead Plating
Pure Sn (Tin)
Tape 800 p/reel
NP180N055TUK-E2-AY *1
Note:
Packing
Taping (E1 type)
Taping (E2 type)
Package
TO-263-7pin
(MP-25ZT)
*1 Pb-free (This product does not contain Pb in the external electrode)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
55
20
180
720
348
1.8
175
–55 to 175
66
435
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1%
*2 RG = 25 , VGS = 20 0 V
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R07DS0593EJ0100 Rev.1.00
Dec 12, 2011
Rth(ch-C)
Rth(ch-A)
0.43
83.3
°C/W
°C/W
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