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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 376-2922
(212)227-6006
FAX: (973) 3764960
2N4910 thru 2N4912 (SILICON)
Medium-power NPN silicon transistors designed
for driver circuits, switching, and amplifier applications. Complement to PNP 2N4898 thru 2N4900.
(TO-66)
Collector coniwctad to caw
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current - Continuous*
Base Current — Continuous
Total Device Dissipation TC = 25° C
Symbol
VCEO
V CB
V EB
V
PD
Unit
40
60
80
Vdc
40
60
80
Vdc
"
5.0
.-
Vdc
Adc
„
-
4'0
^
1.0
'B
~
Adc
25
-
Watts
-
Derate above 25° C
Operating & Storage Junction
Temperature Range
2N4910 2N4911 2N4912
T J' T stg
0.143
.-
mW/°C
•*
65 to +200
•>
"c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
9JC
Max
7.0
Unit
°c/w
* The 1.0 Amp maximum I_ value is based upon JEDEC current gain requirements.
The 4.0 Amp maximum value is based upon actual current-handling capability of the device
(see Figure 5).