D
TO-247
G
APT8075BN
POWER MOS IV
®
800V
13.0A 0.75Ω
Ω
APT8090BN
S
800V
12.0A 0.90Ω
Ω
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
APT
8075BN
UNIT
800
Volts
13
12
56
Drain-Source Voltage
APT
8090BN
800
Parameter
48
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
Volts
Total Power Dissipation @ TC = 25°C
310
Watts
Linear Derating Factor
2.48
W/°C
PD
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
Characteristic / Test Conditions / Part Number
APT8075BN
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V)
2
13
APT8090BN
MAX
800
APT8075BN
2
TYP
800
APT8090BN
Drain-Source Breakdown Voltage
(VGS = 0V, ID = 250 µA)
On State Drain Current
MIN
12
Volts
Amps
APT8075BN
(VGS = 10V, 0.5 ID [Cont.])
0.75
APT8090BN
Drain-Source On-State Resistance
UNIT
0.90
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
MAX
UNIT
Gate Threshold Voltage
(VDS = VGS, ID = 1.0mA)
2
THERMAL CHARACTERISTICS
Characteristic
RθJC
TYP
Junction to Case
RθJA
MIN
Junction to Ambient
0.40
40
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
050-8007 Rev C
Symbol
