ZTX602
ZTX603
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX602
ZTX603
MIN.
2K
5K
2K
0.5K
hFE
Static Forward
Current Transfer
Ratio
MAX. MIN.
2K
5K
2K
0.5K
100K
150
Transition Frequency fT
UNIT
CONDITIONS.
MAX.
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
100K
150
MHz
IC=100mA, VCE=10V
f=20MHz
ZTX602
ZTX603
ISSUE 1 MARCH 94
FEATURES
* 80 Volt VCEO
* 1 Amp continuous current
* Gain of 2K at IC=1 Amp
* Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX602
ZTX603
UNIT
Collector-Base Voltage
VCBO
80
100
V
VCB=10V, f=1MHz
Collector-Emitter Voltage
VCEO
60
80
IC=500mA, VCE=10V
IB1=IB2=0.5mA
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb = 25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
Input Capacitance
Cibo
90 Typical
pF
VEB=500mV, f=1MHz
Output Capacitance
Cobo
15 Typical
pF
ton
0.5 Typical
µs
toff
Switching Times
1.1 Typical
µs
Maximum Power Dissipation (W)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
R5 = 200KΩ
1.0
R5 = 50KΩ
R5 = 10KΩ
V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
R5 = 1MΩ
0.8 R5 = ∞
PARAMETER
SYMBOL
ZTX602
MIN.
0.6
ZTX603
MAX. MIN.
UNIT
CONDITIONS.
MAX.
Collector-Base
Breakdown Voltage
0.4
ZTX602
0.2
ZTX603
0
1
10
100
200
VCE - Collector-Emitter Voltage (Volts)
V(BR)CBO
80
100
V
IC=100µ A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
60
80
V
IC=10mA*
Emitter-Base
Breakdown Voltage
DC Conditions
V(BR)EBO
10
10
V
IE=100µ A
Collector Cut-Off
Current
ICBO
10
µA
µA
µA
µA
VCB=60V
VCB=80V
VCB=60V,T amb =100°C
V CB=80V, T amb =100°C
0.1
µA
VEB=8V
10
µA
µA
VCES=60V
VCES=80V
10
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using
the following equation
T amb (max )
Power (max ) − Power (act)
=
+25° C
0.0057
Tamb(max)= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given VCE and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
3-210
0.01
0.01
Emitter Cut-Off
Current
IEBO
0.1
Colllector-Emitter
Cut-Off Current
ICES
10
Collector-Emitter
Saturation Voltage
VCE(sat)
1.0
1.0
1.0
1.0
V
V
IC=400mA,
IB=0.4mA*
IC=1A, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.8
1.8
V
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.7
1.7
V
IC=1A, VCE=5V*
3-209
