PD - 96966B
IRFP4242PbF
PDP MOSFET
Features
l Advanced process technology
l Key parameters optimized for PDP Sustain &
Energy Recovery applications
l Low EPULSE rating to reduce the power
dissipation in Sustain & ER applications
l Low QG for fast response
l High repetitive peak current capability for
reliable operation
l Short fall & rise times for fast switching
l175°C operating junction temperature for
improved ruggedness
l Repetitive avalanche capability for robustness
and reliability
Key Parameters
VDS min
300
V
VDS (Avalanche) typ.
360
RDS(ON) typ. @ 10V
49
V
m:
IRP max @ TC= 100°C
93
A
TJ max
175
°C
D
D
G
G
S
D
S
TO-247AC
G
D
S
G a te
D ra in
S o u rc e
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
Units
Gate-to-Source Voltage
±30
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
46
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
33
IDM
Pulsed Drain Current
190
IRP @ TC = 100°C
Repetitive Peak Current
PD @TC = 25°C
Power Dissipation
430
PD @TC = 100°C
Power Dissipation
210
Linear Derating Factor
2.9
W/°C
TJ
Operating Junction and
-40 to + 175
°C
TSTG
Storage Temperature Range
Parameter
VGS
c
g
93
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
x
300
W
x
10lb in (1.1N m)
N
Thermal Resistance
Parameter
RθJC
Junction-to-Case
f
Typ.
Max.
Units
–––
0.35
°C/W
Notes through
are on page 8
www.irf.com
1
09/14/07
