140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
2N5031
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
Silicon NPN, To-72 packaged VHF/UHF Transistor
•
1.2 GHz Current-Gain Bandwidth Product @ 5mA IC
•
Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz
2
1
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
The 2N5031 is a silicon NPN transistor, designed for general purpose small-signal, pre-driver, and driver,
applications targeted for military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
Parameter
Collector-Emitter Voltage
Value
10
Unit
Vdc
VCBO
Collector-Base Voltage
15
Vdc
VEBO
Emitter-Base Voltage
3.0
Vdc
IC
Collector Current
20
mA
200
1.14
mWatts
mW/ ºC
Thermal Data
P
D
Total Device Dissipation @ TA = 25º C
Derate above 25º C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.