20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 378-2922
(212) 227-8008
FAX: (973) 3784080
2N2202
2N2203
2N2204
TRANSISTOR, POWER AMPLIFIER
I. General Description
This device is an NPN, silicon, triode power transistor designed primarily for
amplifier applications.
Mechanical Data
A.
Outline
Per outline drawing
B.
Terminal Designations
Terminal
Element
1
Emitter
2
Base
3
Collector
Case
Connected to collector
C.
Handling Precautions
None
D- • Mounting Positions
Any
UL
Maximum Ratings
A.
Temperature
1. Storage temperature range, Tstg
2. Operating case temperature range, TQ
3. Lead temperature 1/16" t 1/32" from case for 10 sec.
B.
Voltage, 25°C Case Temperature
1. Collector-base voltage, VCBO
2. Emitter-base voltage, VEBO
3. Collector- emitter voltage, VCEQ
-65 to 175 C
-65 to 175°C
260°C
12° v
10 v
100 V
N.I Semi-Conductors reserves the right to change test conditions, parameter limits :md package dimensions without notice
lulbrmalion furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the lime of going to press. However N.I
Seini-t onUiiutors .issuincs no responsibility for any errurs or oinfcsituis discovered in its use NJ .Semi-Conductors encourages
customers lo \erit> thai ihitashcets are current before placing orders