BZT03-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
949539
Applications
• Medium power voltage regulators and medium
power transient suppression circuits
Mechanical Data
Case: SOD-57
Weight: approx. 369 mg
Packaging codes/options:
TAP / 5 k ammopack (52 mm tape) / 25 k/box
TR / 5 k 10" reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Value
Unit
PV
3.25
W
Tamb = 25 °C
PV
1.3
W
PZRM
Power dissipation
Symbol
l = 10 mm, TL = 25 °C
10
W
PZSM
600
W
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
tp = 100 μs, Tj = 25 °C
Tj
175
°C
Tstg
- 65 to + 175
°C
Junction temperature
Storage temperature range
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
Symbol
Value
Unit
l = 10 mm, TL = constant
RthJA
46
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Document Number 85599
Rev. 1.5, 26-Aug-10
Test condition
Symbol
IF = 0.5 A
VF
Min.
Typ.
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Max.
Unit
1.2
V
www.vishay.com
1
