1N4099 THRU 1N4135
SILICON ZENER DIODE
LOW NOISE
6.8 VOLT THRU 100 VOLT
250mW, 5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4099 series
silicon Zener diode is designed for low leakage, low
current, and low noise applications.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Power Dissipation
Operating and Storage Junction Temperature
UNITS
PD
TJ, Tstg
250
mW
-65 to +200
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
ZENER
VOLTAGE
VZ @ IZT
TYPE
MIN
NOM
MAXIMUM
REVERSE
CURRENT
TEST
CURRENT
MAX
MAXIMUM
ZENER
IMPEDANCE
IZT
ZZT @ IZT
IR
@
VR
MAXIMUM
ZENER
CURRENT
MAXIMUM
NOISE
DENSITY
IZM
ND @ 250μA
V
V
V
μA
Ω
μA
V
mA
μV/ Hz
1N4099
6.460
6.8
7.140
250
200
10
5.2
35.0
40
1N4100
7.125
7.5
7.875
250
200
10
5.7
31.8
40
1N4101
7.790
8.2
8.610
250
200
1.0
6.3
29.0
40
1N4102
8.265
8.7
9.135
250
200
1.0
6.7
27.4
40
1N4103
8.645
9.1
9.555
250
200
1.0
7.0
26.2
40
1N4104
9.50
10
10.50
250
200
1.0
7.6
24.8
40
1N4105
10.45
11
11.55
250
200
0.05
8.5
21.6
40
1N4106
11.40
12
12.60
250
200
0.05
9.2
20.4
40
1N4107
12.35
13
13.65
250
200
0.05
9.9
19.0
40
1N4108
13.30
14
14.70
250
200
0.05
10.7
17.5
40
1N4109
14.25
15
15.75
250
100
0.05
11.4
16.3
40
1N4110
15.20
16
16.80
250
100
0.05
12.2
15.4
40
1N4111
16.15
17
17.85
250
100
0.05
13.0
14.5
40
1N4112
17.10
18
18.90
250
100
0.05
13.7
13.2
40
1N4113
18.05
19
19.95
250
150
0.05
14.5
12.5
40
1N4114
19.00
20
21.00
250
150
0.01
15.2
11.9
40
1N4115
20.90
22
23.10
250
150
0.01
16.8
10.8
40
1N4116
22.80
24
25.20
250
150
0.01
18.3
9.9
40
1N4117
23.75
25
26.25
250
150
0.01
19.0
9.5
40
1N4118
25.65
27
28.35
250
150
0.01
20.5
8.8
40
1N4119
26.60
28
29.40
250
200
0.01
21.3
8.5
40
1N4120
28.50
30
31.50
250
200
0.01
22.8
7.9
40
1N4121
31.35
33
34.65
250
200
0.01
25.1
7.2
40
R1 (4-February 2014)
