TC7SZ126F/FU
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7SZ126F, TC7SZ126FU
Bus Buffer 3-State Output
TC7SZ126F
Features
•
High output current: ±24 mA (min) at VCC = 3 V
•
Super high speed operation: tpd 2.6 ns (typ.) at VCC = 5 V, 50 pF
•
Operation voltage range: VCC (opr) = 1.8 to 5.5 V
•
5.5-V tolerant inputs
•
5.5-V power down protection output
•
Matches the performance of TC74LCX series when operated at
3.3 V VCC
(SMV)
TC7SZ126FU
Marking
Product name
J
C
(USV)
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Supply voltage
VCC
−0.5 to 6
V
DC input voltage
VIN
−0.5 to 6
Pin Assignment (top view)
Unit
V
−0.5 to 6 (Note 1)
VOUT
Input diode current
IIK
−20
IOK
−20(Note 3)
mA
DC output current
IOUT
±50
ICC
±50
PD
200
Tstg
−65 to 150
°C
TL
260
OUT Y
mW
Storage temperature
4
mA
Power dissipation
3
VCC
mA
DC VCC/ground current
2
GND
5
mA
Output diode current
1
IN A
DC output voltage
G
°C
Lead temperature (10s)
−0.5 to VCC+0.5 (Note 2)
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0V or high impedance condition
Note 2: High or Low state. Do not exceed IOUT of absolute maximum ratings.
Note 3: VOUT < GND
Start of commercial production
1998-08
1
2014-03-01