, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
RF POWER TRANSISTOR
2SC3102
NPN EPITAXIAL PLANAR TYPE
DESCRIPTION
2SC3102 is a silicon NPN epitaxial planar type transistor specifi-
OUTLINE DRAWING
c,mers,ons ,„
cally designed for high power amplifiers applications in UHF band.
FEATURES
• High power output and high gain: P 0 £60W, Gpeg4.8dB
@V C C =12.5V, f - 520MHz, Pin = 20W.
• Emitter ballasted construction.
• High ruggedness: Ability to withstand more than 20:1 load
VSWR when operated at V c c = 15.2V, P0 = 60W,
f = 520MHz.
• High reliability due to gold metalization die
• Flange type ceramic package
• 2in=1.0 + j1.0Q. Z 0 ut=1.l +J1.08
@ V C C = 1 2 . 5 V , f = 520MHz, P0 = 60W.
_7.9 t 0 . 4 , 7 9 ± 0 , 4
I?-9M4X
APPLICATION
.S±0.3
For output stage of 50W power amplifiers in UHF band.
PIN :
T.' COLLECTOR
j: EMITTER (FLANGE)
•1) BASE
T- E M I T T E R (FLANGE!
5. FIN ;EMITTFW
T-40E
ABSOLUTE MAXIMUM RATINGS a^
Conditions
Parameter
SvmDO
VCBO
VEBO
4
V
'.7
V
Emitter tc base voltage
VCEO
RBE = oo
^ollecior current
Pr
Collator dissipation
IS
T|
-55
W
1/5
StO'dge temperature
A
170
TC>25°C
junction lemperalurfi
T51J
Mn-.e
V
36
Collector to emitter voltage
:c
Uml
Ratings
Colleclof lo btise voltage
•c
to ] rb
'C
Above parameters dre guaranteed independently
ELECTRICAL CHARACTERISTICS ^-Limits
Mm
TvD
Max
V BR t00
tmi'ter :o base breaKdcwn voltage
1^ = 20mA. IG - ft
A
V
v.en.cec
Collector lo base breakdown vo [age
l C i.20n-A. l£ = 0
35
V
J ^ etc
Collector 10 emitter ores-down voltage
IC = B 2A. Rer = n
17
I"BO
Collector Cut oM J u r r e n t
Vra - 15V, i c = 0
Erriller C ' j t off CL.'rrjnt
DC f o r w a r d c j r r e r - t gdin*
V C E » 'ov. i c --2A
f'o
E?0
1,
Nnie
mA
5
v f n = 3 V ic = 0
hfE
V
5
mA
10
50
Power Output
60
65
W
Co. lector etl'Ciency
60
65
:•>
*PuI:*; :esl
. r atmg<
Quality Semi-Conductors
l-.^its anl condtticns dre subject ro change
180
-
