me.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
2N5160
The RF Line
PNP SILICON
AMPLIFIER
TRANSISTOR
PNP SILICON RF POWER TRANSISTORS
. . . designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment, Suitable for use as Class A,
B, or C output driver, or pre-driver stages in VHP and UHF.
• High Power Gain - GpE = 8.0 dB (Min) @ f - 400 MHz,
14.5 dB (Typ) @ 175 MHz - No Emitter Tuning
f
• Power Output - Pout = 1.0 Watt (Min) @ f = 400 MHz
- 1.5 Watt (Typ) @ f = 175 MHz
• Resists Burnout When Load is Shorted or Opened
• Designed for Use in Complementary Circuits with 2N3866
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
Value
Unit
Vdc
VCEO.
*
Collector-B.iSf Voltage
VCB
80
Vdc
Emitter-Base Voltage
VM
4.0
Vdc
Collector Current
IG
0. 4
Adc
Total Device Dissipation ST_ » 29° C
Derate above 25° C
Pn
5, 0
28. 6
Watts
mW/°C
V^-HA
Operating and Storage Junction
Temperature Range
J
Bg
i
DIM
A
MILLIMETER!
MID MAX
.:
.40
,SI
? "' :
E
F,
«
H
.41
.21 9
STYLE 1:
PIN t. EMITTER
2. BASE
3. COLLECTOR
INCH I
MM MAX
0.3! _ i.::j.
0.31
":s
.w «.n
.53?
: .11
0.' 1
0. 0
B
E
: ii-
4, | .* 1 (L i ••&
. L
i * «•• „ • ; 4
. 1
Jj 4
0-0)
..!! ' 45 NOM - - 45*
•' i
°-25
M
i L
„
)
SKU
•Jt
'-27
' •"
n
90»NOM
90"l 1
R
2.54 1 0.1IW
All JtaECrfimwiMlind nomi>tiy.
ul
CAS67M!
TO-3*
Quality Semi-Conductors