BSX45, -10, -16
BSX46, -10, -16
BSX47, -10
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BSX45 series types
are silicon NPN epitaxial transistors designed for general
purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation (TC=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
PD
TJ, Tstg
ΘJC
ΘJA
BSX45
80
40
BSX46
100
60
7.0
1.0
1.5
200
6.25
0.8
-65 to +200
28
219
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
BSX45
BSX46
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
ICBO
VCB=60V
30
30
ICBO
VCB=60V, TA=150°C
10
10
ICBO
VCB=80V
ICBO
VCB=80V, TA=150°C
IEBO
VEB=5.0V
10
10
VCE(SAT)
IC=1.0A, IB=100mA
1.0
1.0
VCE(SAT)
IC=500mA, IB=25mA
VBE(ON)
VCE=1.0V, IC=100mA
1.0
1.0
VBE(ON)
VCE=1.0V, IC=500mA
0.75
1.5
0.75
1.5
VBE(ON)
VCE=1.0V, IC=1.0A
2.0
2.0
fT
VCE=10V, IC=50mA, f=100MHz
50
50
Cc
VCB=10V, IE=0, f=1.0MHz
25
20
Ce
VEB=0.5V, IC=0, f=1.0MHz
80
80
ton
IC=100mA, IB1=IB2=5.0mA
200
200
toff
IC=100mA, IB1=IB2=5.0mA
850
850
NF
VCE=5.0V, IC=100μA, RS=1.0kΩ
f=1.0kHz, BW=200Hz
3.5 TYP
3.5 TYP
BSX47
120
80
BSX47
MIN MAX
30
10
10
0.9
1.0
0.75
50
-
1.5
2.0
15
80
200
850
3.5 TYP
UNITS
V
V
V
A
A
mA
W
W
°C
°C/W
°C/W
UNITS
nA
μA
nA
μA
nA
V
V
V
V
V
MHz
pF
pF
ns
ns
dB
R1 (24-October 2013)
