2N2219
Silicon NPN Transistor
Data Sheet
Description
Applications
Semicoa Semiconductors offers:
• General purpose
• Low power
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2219J)
• JANTX level (2N2219JX)
• JANTXV level (2N2219JV)
• JANS level (2N2219JS)
• JANSR level (2N2219JSR)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
Features
2072 for JANTXV and JANS
•
•
•
•
• Radiation testing (total dose) upon request
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/251
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV, JANS and JANSR
• Radiation testing available
Please contact SEMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
TC = 25°C unless otherwise specified
Symbol
VCEO
Rating
30
Collector-Base Voltage
VCBO
60
Unit
Volts
Volts
Emitter-Base Voltage
VEBO
5
Volts
Collector Current, Continuous
IC
800
mA
Power Dissipation, TA = 25OC
Derate linearly above 25OC
PT
0.8
4.6
Power Dissipation, TC = 25OC
Derate linearly above 25OC
PT
3.0
17.0
W
mW/°C
W
mW/°C
Operating Junction Temperature
TJ
-55 to +200
°C
TSTG
-55 to +200
°C
Storage Temperature
Copyright 2010
Rev. K
SEMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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