BFX89
BFY90
SILICON
NPN RF TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BFX89 and BFY90
are silicon NPN RF transistors designed for VHF/UHF
amplifier, oscillator and converter applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCER
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current (f>1.0MHz)
ICM
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
30
30
15
2.5
25
50
200
300
-65 to +200
875
583
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
BFX89
SYMBOL
TEST CONDITIONS
MIN TYP MAX
ICBO
VCB=15V
10
BVCBO
IC=10μA
30
BVCER
IC=1.0mA, RBE=50Ω
30
BVCEO
IC=1.0mA
15
BVEBO
IE=10μA
2.5
hFE
VCE=1.0V, IC=2.0mA
20
150
hFE
VCE=1.0V, IC=25mA
20
125
fT
VCE=5.0V, IC=2.0mA, f=500MHz
1.0
fT
VCE=5.0V, IC=25mA, f=500MHz
1.2
Cob
VCB=10V, IE=0, f=1.0MHz
1.7
Cre
VCE=5.0V, IC=2.0mA, f=1.0MHz
0.6
Gpe
VCE=10V, IC=8.0mA, f=200MHz
19
22
UNITS
V
V
V
V
mA
mA
mW
mW
°C
°C/W
°C/W
BFY90
MIN TYP MAX
10
30
30
15
2.5
25
150
20
125
1.0 1.1
1.3 1.4
1.5
0.6 0.8
-
UNITS
nA
V
V
V
V
GHz
GHz
pF
pF
dB
Gpe
Gpe
VCE=10V,
VCE=10V,
IC=8.0mA, f=800MHz
IC=14mA, f=200MHz
-
-
7.0
-
21
23
-
dB
dB
Gpe
VCE=10V, IC=14mA, f=800MHz
-
-
-
-
8.0
-
dB
R4 (13-March 2014)