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DTB123ESTP
DTB123EK / DTB123ES Transistors -500mA / -50V Digital transistors (with built-in resistors) DTB123EK / DTB123ES External dimensions (Unit : mm) Applications Inverter, Interface, Driver DTB123EK 2.9 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. 0.8 1.6 2.8 (3) (2) 0.15 0.3Min. (1) 0.95 0.95 (1) GND (2) IN (3) OUT Each lead has same dimensions 1.9 ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : F12 DTB123ES 2.0 3.0 4.0 (15Min.) 3Min. Structure PNP epitaxial planar silicon transistor (Resistor built-in type) 0.45 2.5 Packaging specifications 0.5 0.45 5.0 SMT3 Package SPT Taping T146 3000 (1) GND (2) OUT (3) IN (1) (2) (3) TP Basic ordering unit (pieces) ROHM : SPT EIAJ : SC-72 Taping Code 5000 Packaging type Part No. 1.1 0.4 Abbreviated symbol : B123ES − DTB123EK − DTB123ES Absolute maximum ratings (Ta=25°C) Parameter Equivalent circuit Limits Symbol Unit DTB123EK DTB123ES OUT R1 Supply voltage VCC −50 V Input voltage VIN −12 to +10 V Output current IC −500 mA Power dissipation PD Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 IN C 200 300 R2 GND(+) mW OUT IN GND(+) R1=R2=2.2kΩ Rev.B 1/2
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM（R:抵抗 Ohm:抵抗を示す単位）はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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