2SK3845
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOSIII)
2SK3845
Switching Regulator, DC-DC Converter Applications and
Motor Drive Applications
•
Low drain-source ON resistance: RDS (ON) = 4.7 mΩ (typ.)
•
Unit: mm
High forward transfer admittance: |Yfs| = 88 S (typ.)
•
Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
•
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
(Note 1)
ID
70
Pulse (Note 1)
IDP
280
Drain power dissipation (Tc = 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
328
mJ
Avalanche current
IAR
70
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to150
°C
DC
Drain current
A
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Thermal resistance, channel to case
Rth (ch-c)
1.0
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
2
Unit
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
1
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 91 μH, RG = 25 Ω, IAR = 70 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
3
2009-09-29
