Data Sheet
Schottky Barrier Diode
RB095B-60
Dimensions(Unit : mm)
Land size figure(Unit : mm)
6.0
6.0
Applications
General rectification
1.6
1.6
3.0 2.0
Features
1) Power mold type. (CPD3)
2) Low VF
3) High reliability
CPD
Construction
Silicon epitaxial planar
2.3 2.3
Structure
(2)
(1)
(3)
Taping dimensions(Unit : mm)
2.0±0.05
φ1.55±0.1
0
8.0±0.1
0.4±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
60
VRM
60
VR
6
Io
45
IFSM
150
Tj
40 to 150
Tstg
(*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=112C
Forward voltage
Reverse current
Thermal impedance
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Symbol
VF
IR
Min.
-
jc
C
C
Typ.
-
Max.
0.58
-
-
300
μA
-
-
6.0
C/W
1/3
2.7±0.2
Unit
V
V
A
A
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak(60Hz・1cyc)(*1)
Junction temperature
Storage temperature
Electrical characteristic (Ta=25C)
Parameter
10.1±0.1
10.1±0.1
φ3.0±0.1
8.0±0.1
0～0.5
6.8±0.1
13.5±0.2
TL
16.0±0.2
7.5±0.05
2.5±0.1
4.0±0.1
Unit
V
Conditions
IF=3.0A
VR=60V
junction to case
2011.04 - Rev.G
