New Product
V40100P
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.372 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
TMBS®
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
3
2
• Solder dip 260 °C, 40 s
1
TO-247AD (TO-3P)
PIN 1
PIN 3
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
2 x 20 A
VRRM
100 V
Case: TO-247AD (TO-3P)
IFSM
300 A
Epoxy meets UL 94V-0 flammability rating
VF at IF = 20 A
0.60 V
TJ max.
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100P
UNIT
VRRM
Maximum repetitive peak reverse voltage
100
V
Maximum average forward rectified current (Fig. 1)
per device
per diode
IF(AV)
40
20
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
per diode
IFSM
300
A
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V
TJ, TSTG
- 40 to + 150
°C
Operating junction and storage temperature range
Document Number: 88939
Revision: 27-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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