SMPS MOSFET
HEXFET® Power MOSFET
Applications
l
IRF6218SPbF
VDSS
Reset Switch for Active Clamp
Reset DC-DC converters
RDS(on) max
-150V 150m:@VGS = -10V
ID
-27A
Benefits
l
l
l
l
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design
(See App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Lead-Free
Base Part Number
G
D2Pak
IRF6218SPbF
S
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Package Type
IRF6218SPbF
D
D2-Pak
Orderable Part Number
IRF6218SPbF
IRF6218STRLPbF
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
-150
V
VGS
Gate-to-Source Voltage
± 20
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
-27
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
-19
IDM
Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
-110
c
Linear Derating Factor
250
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
W
1.6
W/°C
8.2
-55 to + 175
h
dv/dt
TJ
A
V/ns
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Typ.
g
Junction-to-Ambient (PCB Mounted, steady state)
gh
Max.
Units
–––
0.61
°C/W
–––
40
Notes through are on page 9
1
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March 25, 2015