IS66WV25616ALL
IS66WV25616BLL
4Mb LOW VOLTAGE,
ULTRA LOW POWER PSEUDO CMOS STATIC RAM
PRELIMINARY INFORMATION
JANUARY 2008
FEATURES
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DESCRIPTION
The ISSI IS66WV25616ALL/BLL is a high-speed, 4M
High-speed access time: 55ns
CMOS low power operation
– mW (typical) operating
– µW (typical) CMOS standby
Single power supply
– 1.7V--1.95V Vdd (66WV25616ALL) (70ns)
– 2.5V--3.6V Vdd (66WV25616BLL) (55ns)
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Lead-free available
bit static RAMs organized as 256K words by 16 bits. It is
fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques, yields high-performance and low power
consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low
(deselected) or both LB and UB are HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS66WV25616ALL/BLL is packaged in the JEDEC
standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP
(TYPE II). The device is aslo available for die sales.
FUNCTIONAL BLOCK DIAGRAM
DECODER
256K x 16
MEMORY ARRAY
I/O
DATA
CIRCUIT
A0-A17
COLUMN I/O
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CS2
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
12/20/07
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