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2SB1135
2SB1135R Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).4 @I(C) (A) (Test Condition)4 @I(B) (A) (Test Condition)400m h(FE) Min. Current gain.100 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq10M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) C(obo) (Max) (F) @V(CB) (V) (Test Condition) @Freq. (Hz) (Test Condition)
SAMSUNG
Samsung Electronics Co., Ltd
韓国
DRAM製品、モバイル機器の製造販売メーカー
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