BC318C
PNP Epitaxial Silicon Transistor
• This device is designed for general purpose amplifier application at collector currents to 800mA.
• Sourced from process 38.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings TC=25°C unless otherwise noted
Value
Units
VCBO
Symbol
Collector-Base Voltage
Parameter
30
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
100
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Ta=25°C unless otherwise noted
Symbol
Max.
Units
PD
Total Device Dissipation
Derate above 25°C
Parameter
625
5.0
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 10μA
30
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1mA
20
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 100μA
5
V
BVCES
Collector-Emitter Breakdown Voltage
IC = 100μA
30
ICBO
Collector Cut-off Current
VCB = 20V
hFE
DC Current Gain
VCE = 5V, IC = 10 μA
VCE = 5V, IC = 2 mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBE(on)
Base-Emitter On Voltage
VCE = 5V, IC = 2m
VCE = 5V, IC = 10mA
Ccb
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
T = 25 °C
T = 100 °C
V
30
15
100
420
nA
μA
800
0.2
0.5
0.57
V
0.72
0.77
V
4
pF
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3.These ratings are based on a maximum junction temperature of 150degrees C.
© 2007 Fairchild Semiconductor Corporation
BC318C Rev. 1.0.0
www.fairchildsemi.com
1
BC318C — PNP Epitaxial Silicon Transistor
September 2007
