1SS344
TOSHIBA Diode
Silicon Epitaxial Schottky Planar Type
1SS344
Ultra High Speed Switching Application
Low forward voltage
Unit: mm
: VF (3) = 0.50V (typ.)
Fast reverse recovery time : trr = 20ns (typ.)
High average forward current : IO = 0.5A (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VRM
25
V
Reverse voltage
VR
20
V
Maximum (peak) forward current
IFM
1500
mA
Maximum (peak) reverse voltage
Average forward current
IO
500
mA
IFSM
5
A
Power dissipation
P
200
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55~125
°C
JEDEC
Operating Temperature
Topr
−40~100
°C
JEITA
Surge current (10ms)
TD-236MOD
SC-59
1-3G1B
TOSHIBA
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.012g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
Characteristic
―
VF (2)
Min
Typ.
Max
IF = 10mA
―
0.30
―
―
IF = 100mA
―
0.38
―
VF (3)
―
IF = 500mA
―
0.50
0.55
IR (1)
―
VR = 10V
―
―
20
IR (2)
―
VR = 20V
―
―
100
Total capacitance
CT
―
VR = 0, f = 1MHz
―
120
―
pF
Reverse recovery time
trr
―
IF = 50mA, (Fig.1)
―
20
―
ns
Forward voltage
Reverse current
Test Condition
1
Unit
V
μA
2007-11-01