2SC5353
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (PCT process)
2SC5353
Switching Regulator and High Voltage Switching
Applications
High-Speed DC-DC Converter Applications
•
Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max)
•
Unit: mm
High collectors breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
900
V
Collector-emitter voltage
VCEO
800
V
Emitter-base voltage
VEBO
7
V
DC
IC
3
Pulse
ICP
5
IB
1
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
PC
2.0
25
A
A
JEDEC
W
―
JEITA
SC-67
Tj
150
°C
TOSHIBA
2-10R1A
Tstg
−55 to 150
°C
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10
