This product complies with the RoHS Directive (EU 2002/95/EC).
Phototransistors
PNZ158 (PN158)
Silicon planar type
For optical control systems
Features
M
Di ain
sc te
on na
tin nc
ue e/
d
High sensitivity
Fast response: tr = 4 μs (typ.)
Wide spectral sensitivity characteristics, suited for detecting various kinds of LEDs
Small size, thin side-view type package
Parameter
d
pla inc
Pl
ea
ne lud
se
pla m d m es
vis
ne ain ain foll
htt it
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
ion
/
.
Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-collector voltage (Base open)
VECO
5
V
Collector current
IC
20
mA
Collector power dissipation
PC
100
mW
Operating ambient temperature
Topr
–25 to +85
°C
Storage temperature
Tstg
–30 to +100
°C
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Photocurrent *1
IL
Collector-emitter cutoff current (Base open)
Collector-emitter saturation voltage *1
Typ
1.0
4.0
tr
tf
Unit
mA
0.01
1.0
mA
IL = 1 mA, L = 1 000 lx
0.2
0.5
V
VCE = 10 V
800
nm
The angle when the photocurrent is halved
40
°
ue
an
en
θ
Max
VCE = 10 V
on
tin
ce
/D
isc
Half-power angle
4
10
µs
4
VCC = 10 V, IL = 5 mA, RL = 100 W
10
µs
int
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
This device is designed by disregarding radiation.
*1: Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
Ma
Note) 1.
2.
3.
4.
ICEO
λP
Rise time *2
Min
VCE = 10 V, L = 500 lx
VCE(sat)
Peak emission wavelength
Fall time *2
Conditions
Sig. in
50 Ω
VCC
Sig. out
RL
(Input pulse)
90%
10%
(Output pulse)
tr
tr : Rise time
tf : Fall time
tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2009
SHE00022EED
1