This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SB0953 (2SB953), 2SB0953A (2SB953A)
Silicon PNP epitaxial planar type
For low-voltage switching
Unit: mm
10.0±0.2
Rating
−40
V
−50
2SB0953A
Emitter-base voltage (Collector open)
VCEO
−20
V
14.0±0.5
2SB0953
Collector-emitter voltage 2SB0953
(Base open)
2SB0953A
4.2±0.2
1.4±0.1
0.8±0.1
−40
IC
Peak collector current
ICP
Collector power
PC
Ta = 25°C
V
A
−12
A
30
W
0.5+0.2
–0.1
2.54±0.3
−5
1.3±0.2
5.08±0.5
−7
VEBO
Collector current
dissipation
7.5±0.2
Unit
VCBO
φ 3.1±0.1
Solder Dip
(4.0)
Collector-base voltage
(Emitter open)
Symbol
2.7±0.2
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Parameter
16.7±0.3
■ Absolute Maximum Ratings TC = 25°C
4.2±0.2
5.5±0.2
M
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tin nc
ue e/
d
• Low collector-emitter saturation voltage VCE(sat)
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
0.7±0.1
■ Features
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
1 2 3
2
150
Junction temperature
Tj
Storage temperature
Tstg
°C
−55 to +150
°C
■ Electrical Characteristics TC = 25°C ± 3°C
Symbol
2SB0953
2SB0953A
Collector-base cutoff
current (Emitter open)
ce
/D
isc
on
tin
Collector-emitter voltage
(Base open)
VCEO
Conditions
IC = −10 mA, IB = 0
ue
Parameter
2SB0953
Typ
Max
−20
Unit
V
−40
ICBO
VCB = −40 V, IE = 0
VCB = −50 V, IE = 0
−50
IEBO
VEB = −5 V, IC = 0
−50
2SB0953A
Emitter-base cutoff current (Collector open)
Min
−50
µA
µA
hFE1
VCE = −2 V, IC = − 0.1 A
45
hFE2 *
VCE = −2 V, IC = −2 A
60
Collector-emitter saturation voltage
VCE(sat)
IC = −5 A, IB = −0.16 A
− 0.6
V
Base-emitter saturation voltage
VBE(sat)
IC = −5 A, IB = − 0.16 A
−1.5
V
Ma
int
en
an
Forward current transfer ratio
260
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
150
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = −10 V, IE = 0, f = 1 MHz
140
pF
Turn-on time
ton
IC = −2 A, IB1 = −66 mA, IB2 = 66 mA
0.1
µs
Storage time
tstg
VCC = −20 V
Transition frequency
fT
Fall time
0.5
µs
0.1
tf
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00032BED
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