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PSMN8R2-80YS,115
PSMN8R2-80YS N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge Improved mechanical and thermal characteristics High efficiency gains in switching power converters LFPAK provides maximum power density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 80 V ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 - - 82 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 130 W Tj junction temperature -55 - 175 °C VGS = 10 V; Tj(init) = 25 °C; ID = 75 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped - - 120 mJ VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 - 12 - nC - 55 - nC Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge
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NXP Semiconductors
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