TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Lead-Free
1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
DESCRIPTION
The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random
access memory (SRAM) organized as 1,048,576 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate
process technology, this device operates from a single 2.3 to 3.6 V/1.65 to 2.2 V power supply. Advanced circuit
technology provides both high speed and low power at an operating current of 2 mA/MHz and a minimum cycle
time of 55 ns. It is automatically placed in low-power mode at 0.7 μA standby current (at VDD = 3 V, Ta = 25°C,
typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1
and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory
access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various
microprocessor system applications where high speed, low power and battery backup are required. And, with a
guaranteed operating extreme temperature range of −40° to 85°C, the TC55VCM416B, TC55VEM416B,
TC55YCM416B and TC55YEM416B can be used in environments exhibiting extreme temperature conditions. The
TC55VCM416BTGN/BSGN, TC55YCM416BTGN/BSGN is available in a plastic 48-pin thin-small-outline package
(TSOP). The TC55VEM416BXGN, TC55YEM416BXGN is available in a plastic 48-ball BGA.
FEATURES
•
•
•
•
Low-power dissipation
Operating: 6 mW/MHz (typical)
Power down features using CE1 and CE2
Wide operating temperature range of −40° to 85°C
Lead-Free
Part Number
Operating
Supply
Voltage
Access time
(MAX)
Package
Supply
Voltage
2.7~3.6 V
Supply
Voltage
2.3~3.6 V
TC55VCM416BTGN55
48-pin Plastic TSOP(I)
(12×20mm) (0.5mm pin pitch)
(Normal bent)
55 ns
48-pin Plastic TSOP(I)
2.3~3.6 V (12×14mm) (0.5mm pin pitch)
(Normal bent)
55 ns
70 ns
TC55VEM416BXGN55
48-ball BGA
(8×11mm) (0.75mm ball pitch)
55 ns
At
At
Operating Standby
(MAX)
(MAX)
At Data
Retention
70 ns
TC55VCM416BSGN55
Supply Current
70 ns
Part Number
Operating
Supply
Voltage
Access time
(MAX)
Package
Supply
Voltage
1.8~2.2 V
Supply
Voltage
1.65~2.2 V
48-pin Plastic TSOP(I)
(12×20mm) (0.5mm pin pitch)
(Normal bent)
70 ns
70 ns
85 ns
48-ball BGA
(8×11mm) (0.75mm ball pitch)
70 ns
15 μA
1.5~3.6 V
Supply Current
85 ns
TC55YCM416BTGN70
TC55YEM416BXGN70
At
At
Operating Standby
(MAX)
(MAX)
At Data
Retention
85 ns
48-pin Plastic TSOP(I)
TC55YCM416BSGN70 1.65~2.2 V (12×14mm) (0.5mm pin pitch)
(Normal bent)
20 mA
15 mA
15 μA
1.0~2.2 V
2005-08-09
1/18
