TO-92 Plastic-Encapsulate Transistors
2SC1318A
TRANSISTOR（NPN）
TO-92
FEATURES
1. EMITTER
∙ Collector output capacitance :
2. COLLECTOR
3. BASE
Cob=11 pF (TYP),20 pF (MAX)
1 2 3
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
70
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
500
mA
PC
Collector Dissipation
750
mW
TJ, Tstg
Junction and Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Symbol
Parameter
Test
unless
otherwise
conditions
specified）
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=10μA,IE=0
80
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=2mA,IB=0
70
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA,IC=0
5
V
ICBO
VCB=20V,IE=0
hFE(1)
VCE=10V,IC=150mA
85
hFE(2)
VCE=10V,IC=500mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=300mA,IB=30mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=300mA,IB=30mA
1.5
V
Collector cut-off current
0.1
μA
340
DC current gain
fT
Transition frequency
Cob
Collector output capacitance
CLASSIFICATION OF
Rank
Range
VCE=10V,IC=50mA,f=200MHz
VCB=10V,IE=0,f=1MHz
120
MHz
11
20
hFE(1)
Q
R
S
85-170
120-240
170-340
pF
