FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20845-6E
FLASH MEMORY
CMOS
8M (1M × 8/512K × 16) BIT
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
s DESCRIPTION
The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K
words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(1), 44-pin SOP and 48-ball FBGA
,
packages. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply.
12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed
in standard EPROM programmers.
The standard MBM29LV800TA/BA offer access times 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
The MBM29LV800TA/BA are pin and command set compatible with JEDEC standard E2PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the devices is similar
to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29LV800TA/BA are programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the devices automatically time the erase pulse widths and
verify proper cell margin.
(Continued)
s PRODUCT LINE UP
Part No.
MBM29LV800TA/MBM29LV800BA
VCC = 3.3 V
+0.3 V
–0.3 V
-70
—
VCC = 3.0 V
+0.6 V
–0.3 V
—
-90
Max Address Access Time (ns)
70
90
Max CE Access Time (ns)
70
90
Max OE Access Time (ns)
30
35
Ordering Part No.
