BSI
Very Low Power/Voltage CMOS SRAM
128K X 8 bit
BS62LV1029
DESCRIPTION
FEATURES
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
Vcc = 5.0V C-grade : 46mA (@55ns) operating current
I- grade : 47mA (@55ns) operating current
C-grade : 38mA (@70ns) operating current
I- grade : 39mA (@70ns) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options
The BS62LV1029 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.6uA at 5V/25oC and maximum access time of 55ns at 5V/85oC.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV1029 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1029 is available in DICE form , JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4
mm STSOP and 8mmx20mm TSOP.
PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
BS62LV1029SC
BS62LV1029TC
BS62LV1029STC
BS62LV1029PC
BS62LV1029JC
BS62LV1029DC
BS62LV1029SI
BS62LV1029TI
BS62LV1029STI
BS62LV1029PI
BS62LV1029JI
BS62LV1029DI
Vcc
RANGE
Vcc=5.0V
PKG TYPE
(ICC, Max)
Vcc= 5.0V
55ns
70ns
4.5V ~ 5.5V
55/70
8.0uA
46mA
38mA
O
O
4.5V~ 5.5V
55/70
20uA
47mA
39mA
-40 C to +85 C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
•
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(ICCSB1 , Max)
O
32
31
30
29
28
27
BS62LV1029SC 26
BS62LV1029SI 25
BS62LV1029PC 24
BS62LV1029PI
23
BS62LV1029JC
22
BS62LV1029JI
21
20
19
18
17
•
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
55ns :4.5~5.5V
70ns :4.5~5.5V
O
+0 C to +70 C
BS62LV1029TC
BS62LV1029STC
BS62LV1029TI
BS62LV1029STI
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
BLOCK DIAGRAM
PIN CONFIGURATIONS
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
POWER DISSIPATION
STANDBY
Operating
SPEED
(ns)
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A6
A7
A12
A14
A16
A15
A13
A8
A9
A11
Address
Input
Buffer
20
Row
1024
Memory Array
1024 x 1024
Decoder
1024
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
CE2
CE1
WE
OE
Vdd
Gnd
8
8
Data
Input
Buffer
Data
Output
Buffer
Column I/O
8
8
Write Driver
Sense Amp
128
Column Decoder
14
Control
Address Input Buffer
A5 A4 A3 A2 A1 A0 A10
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS62LV1029
1
Revision 1.1
Jan.
2004
