2SJ630
Ordering number : ENA0489
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ630
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--12
Gate-to-Source Voltage
VGSS
±8
V
ID
--6
A
Drain Current (DC)
Drain Current (Pulse)
IDP
V
PW≤10µs, duty cycle≤1%
--24
A
Mounted on a ceramic board (600mm2!0.8mm)
1.5
W
Allowable Power Dissipation
PD
3.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
Ratings
min
typ
max
Unit
ID=--1mA, VGS=0V
VDS=-12V, VGS=0V
VGS=±6.4V, VDS=0V
--12
VDS=-6V, ID=--1mA
VDS=-6V, ID=--3A
--0.3
Forward Transfer Admittance
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--3A, VGS=-4.5V
ID=--1.5A, VGS=-2.5V
45
58
Static Drain-to-Source On-State Resistance
57
80
mΩ
ID=--0.3A, VGS=-1.8V
VDS=-6V, f=1MHz
78
112
mΩ
Input Capacitance
RDS(on)3
Ciss
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
Conditions
IDSS
IGSS
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
td(off)
tf
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : MD
V
--10
±10
5.7
µA
µA
--1.0
9.5
V
S
mΩ
940
pF
230
pF
180
pF
See specified Test Circuit.
12
ns
See specified Test Circuit.
143
ns
See specified Test Circuit.
71
ns
See specified Test Circuit.
89
ns
VDS=-6V, f=1MHz
VDS=-6V, f=1MHz
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81006PA MS IM TC-00000120 No. A0489-1/4
