HL6323MG
ODE2013-00 (M)
Rev.0
Aug. 01, 2008
AlGaInP Laser Diodes
Description
The HL6323MG is a 0.63 μm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The
HL6323MG is packaged in the small can (φ5.6 mm), enabling end products to be kept small.
Features
•
•
•
•
•
Internal Circuit
Pakage Type
• HL6323MG: MG
High output power: 35 mW (CW)
Visible light output: λp = 639 nm Typ
Small package: φ5.6 mm
TM mode oscillation
Single longitudinal mode
1
3
PD
LD
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
Ratings
35 *1
50 *2
2
30
–10 to +50
–40 to +85
PO
PO(pulse)
VR(LD)
VR(PD)
Topr
Tstg
Unit
mW
mW
V
V
°C
°C
Notes: 1. This value is not the same as the specification for long term reliability, such as lifetime.
2. Pulse condition : Pulse width pw = 100 ns , duty = 20%
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Slope efficiency
Operating current
Symbol
Ith
ηs
IOP
Operating voltage
VOP
Beam divergence parallel to
the junction
θ//
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Typ
45
0.6
95
Max
65
0.9
130
Unit
mA
mW/mA
mA
⎯
2.3
2.8
V
7
8.5
11
°
PO = 30 mW
PO = 30 mW
θ⊥
26
30
34
°
PO = 30 mW
λp
IS
635
0.05
639
0.15
642
0.25
nm
mA
Rev.0 Aug. 01, 2008 page 1 of 4
Min
30
0.4
⎯
Test Condition
—
18(mW) / (I(24mW) – I(6mW))
PO = 30 mW
PO = 30 mW
PO = 30 mW, VR(PD) = 5 V
