SUM110P06-07L
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Vishay Siliconix
P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
ID (A) d
RDS(on) (Ω)
0.0069 at VGS = -10 V
-60
-110
0.0088 at VGS = -4.5 V
• TrenchFET® power MOSFET
• Package with low thermal resistance
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
TO-263
G
S
D
Top View
P-Channel MOSFET
G
D
Ordering Information:
SUM110P06-07L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current d
(TJ = 175 °C)
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy a
Power Dissipation
ID
IDM
L = 0.1 mH
TC = 25 °C c
TA = 25 °C b
Operating Junction and Storage Temperature Range
UNIT
V
-110
-95
-240
IAS
-75
EAS
281
A
PD
375
3.75
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
TYPICAL
UNIT
RthJA
40
RthJC
0.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case
PCB mount b
°C/W
Notes
a. Duty cycle ≤ 1 %.
b. When mounted on 1" square PCB (FR4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
S15-1278-Rev. D, 08-Jun-15
Document Number: 72439
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
