XP162A11C0PR-G
ETR1125_003
Power MOSFET
■GENERAL DESCRIPTION
The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■FEATURES
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■PIN CONFIGURATION/
MARKING
Low On-State Resistance : Rds(on) = 0.15Ω@ Vgs = -10V
: Rds(on) = 0.28Ω@ Vgs = -4.5V
Ultra High-Speed Switching
Driving Voltage
: -4.5V
Gate Protect Diode Built-in
P-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PRODUCT NAME
x
1
1
2
G : Gate
S : Source
D : Drain
PRODUCTS
PACKAGE
ORDER UNIT
XP162A11C0PR
SOT-89
1,000/Reel
SOT-89
1,000/Reel
XP162A11C0PR-G
(*)
(*)
The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
* x represents production lot number.
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
■EQUIVALENT CIRCUIT
PARAMETER
SYMBOL RATINGS
UNITS
Drain-Source Voltage
Vdss
-30
V
Gate-Source Voltage
Vgss
±20
V
Drain Current (DC)
Id
-2.5
A
Drain Current (Pulse)
Idp
-10
A
Reverse Drain Current
Idr
-2.5
A
Channel Power Dissipation *
Pd
2
W
Channel Temperature
Tch
150
℃
Storage Temperature
Tstg
-55~150
℃
* When implemented on a ceramic PCB
1/5
