DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3509M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• GPS antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3509M04
Order Number
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
Package
Quantity
Marking
Flat-lead 4-pin thin-
50 pcs (Non reel)
V80
type super minimold
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
3 kpcs/reel
(M04) (Pb-Free)
Supplying Form
the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3509M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
−3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
200
μA
150
mW
Total Power Dissipation
Ptot
Note
Channel Temperature
Tch
+150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PG10608EJ01V0DS (1st edition)
Date Published April 2006 NS CP(K)
Printed in Japan
2005, 2006
