Preliminary Datasheet
RJK0331DPB-01
R07DS0267EJ0500
(Previous: REJ03G1640-0400)
Rev.5.00
Mar 01, 2011
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.6 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
1, 2, 3
4
5
4
G
3
12
4
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
Note1
ID(pulse)
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
20
40
160
40
20
40
50
2.5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
R07DS0267EJ0500 Rev.5.00
Mar 01, 2011
Page 1 of 6
