U20GL2C48A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED)
SILICON EPITAXIAL TYPE
U20GL2C48A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER and CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
: VRRM = 400V
Average Output Rectified Current
: IO = 20A
Ultra Fast Reverse−Recovery Time
Unit: mm
: trr = 35ns (Max)
Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
400
V
Average Output Rectified Current
IO
20
A
Peak One Cycle Surge Forward
Current (Sin Wave)
Junction Temperature
Storage Temperature Range
100 (50Hz)
IFSM
110 (60Hz)
A
Tj
−40~150
°C
Tstg
−40~150
°C
JEDEC
―
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
12-10D2A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight:
g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Peak Forward Voltage
VFM
IFM = 10A
―
―
1.8
V
Repetitive Peak Reverse Current
IRRM
VRRM = 400V
―
―
50
μA
Reverse Recovery Time
trr
IF = 2A, di / dt = −50A / μs
―
―
35
ns
Forward Recovery Time
tfr
IF = 1A
―
―
100
ns
Total DC, Junction to Case
―
―
1.6
°C / W
Thermal Resistance
Note:
Rth (j−c)
VFM, IRRM, trr, tfr ········ A value applied to
one cell.
POLARITY
1
2006-11-08