2SJ107
TOSHIBA Field Effect Transistor
Silicon P Channel Junction Type
2SJ107
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
•
Unit: mm
High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
•
Low RDS (ON): RDS (ON) = 40 Ω (typ.)
•
Small package
•
Complementary to 2SK366
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VGDS
25
V
Gate current
IG
−10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Gate-drain voltage
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-4E1C
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = 25 V, VDS = 0
⎯
⎯
1.0
nA
V (BR) GDS
VDS = 0, IG = 100 μA
25
⎯
⎯
V
VDS = −10 V, VGS = 0
−2.6
⎯
−20
mA
VDS = −10 V, ID = −0.1 μA
0.2
⎯
2.0
V
12
30
⎯
mS
IDSS
(Note 1)
Gate-source cut-off voltage
VGS (OFF)
Forward transfer admittance
⎪Yfs⎪
VDS = −10 V, VGS = 0, f = 1 kHz
(Note 2)
Input capacitance
Ciss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
105
⎯
pF
Reverse transfer capacitance
Crss
VGD = 10 V, ID = 0, f = 1 MHz
⎯
32
⎯
pF
⎯
40
⎯
Ω
Drain-source ON resistance
RDS (ON)
VDS = −10 mV, VGS = 0
(Note 2)
Note 1: IDSS classification GR: −2.6~−6.5 mA, BL: −6~−12 mA, V: −10~−20 mA
Note 2: Condition of the typical value IDSS = −5 mA
1
2007-11-01
