MCL4148 / MCL4448
Fast Switching Diode
Features
Silicon Epitaxial Planar Diodes
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices 1N4148 and 1N4448 respectively
Micro Melf package
Applications
Extreme fast switches
Mechanical Data
Case: MicroMELF Glass Case
Weight: approx. 12.3 mg
Cathode Band Color: Black
Absolute Maximum Ratings
Parameter
Test Condition
tp= 1 us
V
2
A
450
mA
mA
IF
150
mA
PV
Thermal Characteristics
200
IFAV
VR=0
Power dissipation
Junction ambient
V
75
IFSM
Forward current
Parameter
Unit
IFRM
Repetitive peak forward current
Average forward current
100
VR
Reverse voltage
Value
VRRM
Repetitive peak reverse voltage
Peak forward surge current
( Tamb=25oC unless otherwise specified )
Symbol
500
mW
( Tamb=25oC unless otherwise specified )
Test Condition
mounted on epoxy-glass
hard tissue, Fig 5.
35 um copper clad, 0.9m2
copper area per electrode
Symbol
Value
Unit
RthJA
500
K/W
Tj
175
o
C
Tstg
Junction temperature
Stroage temperature range
-65 to +175
o
C
Electrical Characteristics
Parameter
Forward voltage
( Tamb=25oC unless otherwise specified )
Test Condition
IF=5mA
Part
MCL4448
IF=50mA
MCL4148
IF=100mA
Reverse current
Symbol
Min.
Typ.
0.62
MCL4448
VF
Max.
Unit
0.72
0.86
1
0.93
V
1
VR=20V
IR
25
nA
VR=20V, Tj=150oC
IR
50
uA
VR=75V
IR
5
uA
4
pF
Breakdown voltage
IR=100uA, tp/T=0.01, tp=0.3ms
Diode capacitance
VR=0, f=1MHz, VHF=50mV
CD
Rectification efficiency
VHF=2V, f=100MHz
ηr
Reverse recovery time
IF=IR=10mA, iR=1mΑ
V(BR)
100
V
%
45
8
trr
IF=10mA, VR=6V,
iR=0.1x IR, RL=100Ω
658
4
ns
