B834A
B834A Silicon PNP Epitaxial Transistor
Description: The B834A is designed for audio frequency general amplifier
applications and power pumping!
Features: ●Excellent hFE Linearity
●Complementary to D880A
Chip Appearance
Chip Size
1500um×1500um
Chip Thickness
210±20um
Bonding Pad Size
Base
465um×315um
Emitter
425um×300um
Front Metal
Al
Backside Metal
TiNiAg (Au)
Scribe line width
70um
Wafer Size
6 inch
Electrical Characteristics( Ta=25℃)
Characteristic
Symbol
Test Condition
Min
Max
Unit
Collector Cutoff Current
ICBO
VCB=-50 V , IE=0
-0.1
uA
Emitter Cutoff Current
IEBO
VEB= -5 V , IC=0
-0.1
uA
Collector-Base Breakdown Voltage
BVCBO
Ic= -100µA , IE=0
-60
V
Collector-Emitter Breakdown Voltage
BVCEO
Ic= -1 mA , IB=0
-60
V
Emitter-Base Breakdown Voltage
BVEBO
IE= -100µA, IC=0
-7
V
DC Current Gain
Collector Saturation Voltage
Jan 2005
hFE
VCE(sat)
Version :0.0
VCE= -5V , IC= -0.5A
100
IC= -3A, IB= -0.3A
300
-1
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