2SC4546
Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
IEBO
V(BR)CEO
IC
7(Pulse14)
A
IB
2
V
hFE
VCE=4V, IC=3A
10 to 25
A
VCE(sat)
IC=3A, IB=0.6A
0.7max
IC=3A, IB=0.6A
1.3max
V
V
30(Tc=25°C)
W
VBE(sat)
Tj
150
°C
fT
VCE=12V, IE=–0.5A
10typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
55typ
pF
13.0min
3.9
PC
–5
200m A
3
2
I B =50m A
1
0
0
1
2
3
I C / I B =5 Const.
6
0.5
125˚C (Case Temp)
25˚C (Case Temp)
0
0.02
4
0.05
0.1
0.5
1
5
0
10
10
1
5
7
t s tg
1
0.5
tf
t on
0.1
0.05
V C C 200V
I C :I B1 :I B 2 =5:1:–2
0.02
0.2
0.5
5
1
0.5
0.3
0µ
10
10
P c – T a Derating
he
at
si
nk
Co lle ctor Cu rren t I C ( A)
ite
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than 1%
fin
0.5
20
In
Without Heatsink
Natural Cooling
1
ith
5
1
1000
30
s
5
100
Time t(ms)
Ma xim um Powe r Dissipat io n P C (W)
10
1
W
Collector Cur rent I C (A)
1
4
20
20
1.0
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
10
0.5
Collector Current I C (A)
Collector Current I C (A)
0.5
Transient Thermal Resistance
t o n• t s t g• t f (µ s)
Sw it ching Time
DC C urrent G ain h FE
25˚C
–30˚C
0.5
0
Base-Emittor Voltage V B E (V)
t on •t stg • t f – I C Characteristics (Typical)
2
125˚C
0.1
2
Collector Current I C (A)
(V C E =4V)
0.05
3
1
h FE – I C Temperature Characteristics (Typical)
5
0.02
4
–30˚C (Case Temp)
Collector-Emitter Voltage V C E (V)
50
5
p)
4
(V C E =4V)
7
1.0
Tem
300 mA
I C – V BE Temperature Characteristics (Typical)
se
40 0m A
5
0.15max
(Ca
60 0m A
6
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
800mA
1A
2max
0.5max
Weight : Approx 2.0g
a. Part No.
b. Lot No.
B C E
V CE ( sat ) – I C Characteristics (Typical)
I C – V CE Characteristics (Typical)
7
–1.2
0.6
tf
(µs)
˚C
10
tstg
(µs)
ton
(µs)
125
3
67
IB2
(A)
IB1
(A)
Collector Current I C (A)
200
VBB2
(V)
VBB1
(V)
2.4±0.2
2.2±0.2
θ j- a ( ˚ C/W)
IC
(A)
RL
(Ω)
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
sTypical Switching Characteristics (Common Emitter)
VCC
(V)
1.35±0.15
25˚C
Tstg
ø3.3±0.2
a
b
0.8±0.2
µA
400min
8.4±0.2
100max
16.9±0.3
VEB=7V
IC=25mA
)
V
4.2±0.2
2.8 c0.5
Temp
V
7
10.1±0.2
(Case
400
VEBO
µA
–30˚C
VCEO
100max
4.0±0.2
ICBO
mp)
V
Unit
e Te
600
Ratings
VCB=600V
VCBO
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
Symbol
Unit
±0.2
sElectrical Characteristics
Ratings
Symbol
(Cas
sAbsolute maximum ratings (Ta=25°C)
10
Without Heatsink
2
0.1
10
50
100
Collector-Emitter Voltage V C E (V)
500 700
0.1
10
50
100
Collector-Emitter Voltage V C E (V)
500 700
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
115
