MITSUBISHI LSIs
M5M51008CP,FP,VP,RV,KV,KR -55H, -70H,
-55X, -70X
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS
static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance quadruple-polysilicon and
double metal CMOS technology. The use of thin film transistor
(TFT) load cells and CMOS periphery result in a high density and
low power static RAM.
They are low standby current and low operation current and ideal
for the battery back-up application.
The M5M51008CVP,RV,KV,KR are packaged in a 32-pin thin
small outline package which is a high reliability and high density
surface mount device(SMD). Two types of devices are available.
M5M51008CVP,KV(normal lead bend type package),
M5M51008CRV,KR(reverse lead bend type package).Using both
types of devices, it becomes very easy to design a printed circuit
board.
Access
time
(max)
M5M51008CP,FP,VP,RV,KV,KR-55H
55ns
M5M51008CP,FP,VP,RV,KV,KR-70H
70ns
M5M51008CP,FP,VP,RV,KV,KR-55X
55ns
Power supply current
Active
(1MHz)
(max)
M5M51008CP,FP,VP,RV,KV,KR-70X
70ns
15mA
(1MHz)
ADDRESS
INPUTS
DATA
INPUTS/
OUTPUTS
FEATURES
Type name
PIN CONFIGURATION (TOP VIEW)
stand-by
(max)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
ADDRESS
A15 INPUT
CHIP SELECT
S2 INPUT
WRITE
W INPUT CONTROL
A13
A8
ADDRESS
INPUTS
A9
A11
OUTPUT
OE INPUT ENABLE
ADDRESS
A10 INPUT
CHIP
S1 INPUTSELECT
DQ8
DQ7
DQ6 DATA
INPUTS/
DQ5 OUTPUTS
DQ4
Outline 32P4(P), 32P2M-A(FP)
20µA
(Vcc=5.5V)
8µA
(Vcc=5.5V)
0.1µA
(Vcc=3.0V typ)
Low stand-by current 0.1µA (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
M5M51008CP
············ 32pin 600mil DIP
M5M51008CFP
············ 32pin 525mil SOP
M5M51008CVP,RV ············ 32pin 8 X 20 mm 2 TSOP
M5M51008CKV,KR ············ 32pin 8 X 13.4 mm 2 TSOP
NC 1
A16 2
A14 3
A12 4
A7
5
A6
6
A5
7
A4
8
A3
9
A2 10
A1 11
A0 12
DQ1 13
DQ2 14
DQ3 15
GND 16
A11
A9
A8
A13
W
S2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
32
2
31
3
30
4
29
5
28
6
27
7
26
M5M51008CVP,KV
8
25
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
OE
A10
S1
DQ8
DQ7
DQ6
DQ5
DQ4
GND
DQ3
DQ2
DQ1
A0
A1
A2
A3
APPLICATION
Outline 32P3H-E(VP), 32P3K-B(KV)
Small capacity memory units
A4
A5
A6
16
17
15
18
14
19
A7
A12
A14
A16
NC
VCC
A15
S2
W
A13
A8
A9
A11
13
20
12
21
11
22
23
10
9
M5M51008CRV,KR
24
8
25
7
26
6
27
5
28
4
29
3
30
2
31
1
32
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND
DQ4
DQ5
DQ6
DQ7
DQ8
S1
A10
OE
Outline 32P3H-F(RV), 32P3K-C(KR)
NC : NO CONNECTION
MITSUBISHI
ELECTRIC
1
