TK100F04K3L
MOSFETs
Silicon N-channel MOS (U-MOS)
TK100F04K3L
1. Applications
•
Switching Voltage Regulators
•
DC-DC Converters
•
Motor Drivers
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)
(2)
Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(3)
Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heatsink)
3: Source
TO-220SM(W)
25
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
VDSS
40
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
100
Drain current (pulsed)
(Note 1)
IDP
300
Power dissipation
(Tc = 25)
A
PD
180
W
(Note 2)
EAS
125
mJ
IAR
100
A
Channel temperature
(Note 3)
Tch
175
Storage temperature
(Note 3)
Tstg
-55 to 175
Single-pulse avalanche energy
Avalanche current
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-09-26
Rev.1.0
