2SA1150
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1150
Low Frequency Amplifier Applications
•
High hFE: hFE = 100~320
•
Unit: mm
Complementary to 2SC2710.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−35
V
Collector-emitter voltage
VCEO
−30
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−800
mA
Base current
IB
−160
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
Storage temperature range
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-4E1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.13 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −30 V, IE = 0
⎯
⎯
−0.1
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
⎯
⎯
−0.1
μA
V (BR) CEO
IC = −10 mA, IB = 0
−30
⎯
⎯
V
VCE = −1 V, IC = −100 mA
100
⎯
320
hFE (2)
VCE = −1 V, IC = −700 mA
35
⎯
⎯
VCE (sat)
IC = −500 mA, IB = −20 mA
⎯
⎯
−0.7
V
Collector-emitter breakdown voltage
hFE (1)
DC current gain
Collector-emitter saturation voltage
(Note)
Base-emitter voltage
VBE
VCE = −1 V, IC = −10 mA
−0.5
⎯
−0.8
V
Transition frequency
fT
VCE = −5 V, IC = −10 mA
⎯
120
⎯
MHz
VCB = −10 V, IE = 0, f = 1 MHz
⎯
19
⎯
pF
Collector output capacitance
Cob
Note: hFE (1) classification O: 100~200, Y: 160~320
1
2007-11-01
