GT10G131
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT10G131
Strobe Flash Applications
Unit: mm
•
Supplied in compact and thin package requires only a small mounting area
•
5th generation (trench gate structure) IGBT
•
Enhancement-mode
•
4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A)
•
Peak collector current: IC = 200 A (max)
•
Built-in zener diode between gate and emitter
•
SOP-8 package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power
dissipation(t=10 s)
DC
Pulse
Pulse
(Note 1)
(Note 2a)
(Note 2b)
Junction temperature
Storage temperature range
Rating
Unit
VCES
VGES
VGES
400
±6
±8
V
ICP
200
A
PC (1)
PC (2)
Tj
Tstg
1.9
1.0
150
−55~150
W
W
°C
°C
V
1.2.3 Emitter
4
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/
current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/Derating
Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Gate
5.6.7.8 Collector
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1C
Weight: 0.08 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Thermal Characteristics
Characteristics
Symbol
Thermal resistance , junction to
ambient
(t = 10 s)
(Note2a)
Thermal resistance , junction to
ambient
(t = 10 s)
(Note2b)
Marking
Rating
Unit
Rth (j-a) (1)
65.8
°C/W
Rth (j-a) (2)
125
°C/W
(Note 3)
10G131
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page.
1
2006-11-02
