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部品型式

MT41J256M8HX-15EITD

製品説明
仕様・特性

2Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT41J256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 2Gb (TwinDie™) DDR3 SDRAM uses Micron’s 1Gb DDR3 die and has similar functionality. This data sheet provides ball assignments, a general description, functional block diagrams, electrical specifications, and package dimensions. Refer to Micron’s 1Gb DDR3 SDRAM data sheet for complete specifications. (Specifications for base part number MT41J256M4 correlate to TwinDie manufacturing part number MT41J512M4; specifications for base part number MT41J128M8 correlate to TwinDie manufacturing part number MT41J256M8.) • Configuration – 32 Meg x 4 x 8 banks x 2 ranks – 16 Meg x 8 x 8 banks x 2 ranks • FBGA package (lead-free) – 78-ball FBGA (9mm x 11.5mm) – 78-ball FBGA (8mm x 11.5mm) • Timing – cycle time1 – 1.5ns @ CL = 10 (DDR3-1333) – 1.5ns @ CL = 9 (DDR3-1333) – 1.87ns @ CL = 8 (DDR3-1066) – 1.87ns @ CL = 7 (DDR3-1066) – 2.5ns @ CL = 6 (DDR3-800) – 2.5ns @ CL = 5 (DDR3-800) • Self refresh – Standard • Operating temperature – Commercial (0°C ≤ TC ≤ 95°C) • Revision Features • Uses 1Gb Micron die • Two ranks (includes dual CS#, ODT, CKE, and ZQ balls) • Each rank has 8 internal banks • VDD = VDDQ = +1.5V ±0.075V • 1.5V center-terminated push/pull I/O • JEDEC-standard 78-ball ballout • Low-profile package (1.35mm MAX thickness) • TC of 0°C to 95°C – 0°C to 85°C: 8192 refresh cycles in 64ms – 85°C to 95°C: 8192 refresh cycles in 32ms Table 1: Marking 512M4 256M8 THR THV -15 -15E -187 -187E -25 -25E None None :D/F Notes: 1. CL = CAS (READ) latency. Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL -15 -15E -187 -187E -25 -25E 1333 1333 1066 1066 800 800 10-10-10 9-9-9 8-8-8 7-7-7 6-6-6 5-5-5 PDF: 09005aef82fcca5a/Source: 09005aef82ed0bfa MT41J512M4_32M_16M_twindie.fm - Rev. B 4/09 EN 1 t RCD (ns) 15 13.5 15 13.1 15 12.5 t RP (ns) CL (ns) 15 13.5 15 13.1 15 12.5 15 13.5 15 13.1 15 12.5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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