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M29W160FT70N3E

製品説明
仕様・特性

M29W160FT M29W160FB M29W320FT M29W320FB 16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory Features ■ Supply voltage – VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read – VPP = 12 V for Fast Program (optional, available in the M29W320FT/B only) ■ Access time: 70, 80 ns ■ TSOP48 (N) 12 x 20 mm Programming time – 10 µs per byte/word typical ■ Memory organization: – M29W160FT/B: 35 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 32 main blocks – M29W320FT: 67 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 64 main blocks ■ Unlock Bypass Program command – Faster production/batch programming ■ VPP/WP pin for Fast program and Write Protect (available in the M29W320FT/B only) ■ Automotive device grade 3: – Temperature: –40 to 125 °C – Automotive grade certified ■ TSOP48 package is ECOPACK® Low power consumption – Standby and Automatic Standby ■ ■ Common Flash interface – 64 bit security code ■ Electronic signature – Manufacturer code: 0020h – Top device codes M29W160FT: 22C4h M29W320FT: 22CAh – Bottom device codes M29W160FB: 2249h M29W320FB: 22CBh Temporary block unprotection mode ■ ■ Erase Suspend and Resume modes – Read and Program another block during Erase Suspend ■ TFBGA48 (ZA) 6 x 8 mm Program/Erase controller – Embedded byte/word program algorithms ■ FBGA 100,000 Program/Erase cycles per block July 2007 Rev 2 1/57 www.st.com 1

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